48V application switching – a new El Dorado for GaN 
This presentation will discuss the vast opportunities and benefits that GaN power devices can offer in the 48V space, including for example data server applications, hybrid cars with 42V batteries, USB PD charging with extended power range or E-bike applications (motor driver, battery charger or traction invertor). We will illustrate how Innoscience solutions from discrete GaN switches to our integrated SolidGaNTM devices to our Bi-Directional VGANTM switches drive performance and what benefits are offered to the end-users.  
About the speaker:
​​​​​​​​​​​​​​Jan Sonsky is a Vice President of Engineering at Innoscience, the world’s largest Integrated Device Manufacture (IDM) company fully focused on GaN technology. We design, develop and manufacture high performance and reliable GaN devices for a wide range of applications and voltages (30V-650V). Jan is the global leader of Device R&D teams at Innoscience with focus on development of customer-specific products. Prior to joining Innoscience, Jan has worked at NXP Semiconductors for nearly 20 years at different R&D roles covering a broad range of technologies from disrete Si and GaN power devices to integrated (BCD) power and analog technologies. Jan has authored or co-authored over 25 patents and 30-plus papers in technical journals and conferences. He has received his Ph.D. degree from the Delft University of Technology in the Netherlands in 2002. 
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